What kind of diode is used as a photo detector?

Consider the following statements $:$
$A.$ The junction area of a solar cell is made very large compared to a photodiode.
$B.$ Solar cells are not connected with any external bias.
$C.$ $\text{LED}$ is made of heavily doped $p-n$ junction.
$D.$ Increase of forward current results in continuous increase of $\text{LED}$ light intensity up to a saturation point.
$E.$ $\text{LED}$ must be connected in forward bias for the emission of light.
Which of the following statements are correct?

For three circuit elements $A, B$ and $C$,following observations were made in lab:
$(a)$ element $A$ cannot conduct $d.c.$ but allows $a.c.$ through it.
$(b)$ element $B$ conducts both $AC$ and $DC$ but in one direction only.
$(c)$ Element $C$,when connected across $DC$,conducts only for one polarity and emits light whose intensity first increases and then decreases with increase in applied voltage.
The elements $A, B$ and $C$ are respectively identified as

Select the correct statement.

Given below are two statements: one is labelled as Assertion $A$ and the other is labelled as Reason $R$.
Assertion $A$: Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason $R$: The current in the forward bias is more than the current in the reverse bias for a $p-n$ junction diode.
In the light of the above statements,choose the correct answer from the options given below:

Which semiconductor device converts electrical energy into light?